Single-photon avalanche detector-based focal plane array
AssigneePrinceton Lightwave, Inc.
InventorMark Allen Itzler
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Abstract
An imaging sensor having sensitivity at the single-photon level is disclosed. The sensor comprises an array of pixels, each of which comprises a negative-feedback avalanche diode and a read-out circuit that includes a counter. The counter keeps track of the number of photons detected by the diode during a given time period.
Claims21
A sensor comprising a plurality of pixels, wherein each pixel comprises
- a first photodiode comprising a first doped region having a first perimeter, wherein the first photodiode is a single-photon avalanche diode that is physically adapted to provide a current pulse in response to a single received photon;
- a first negative feedback element, wherein the first negative feedback element is electrically connected in series with the first photodiode, and wherein the first photodiode and the first negative feedback element are monolithically integrated such that the first negative feedback element is disposed above the first doped region and is substantially located completely within the first perimeter, and further wherein the first photodiode and the first negative feedback element collectively define a first negative-feedback avalanche diode;
- and
- a circuit comprising a counter, wherein the circuit receives current pulses from the first photodiode and provides an output signal based on the number of current pulses received from the first photodiode within a time period.
A sensor comprising a focal plane array comprising an array of pixels, wherein each pixel comprises:
- (1) a photodetector comprising a negative-feedback avalanche diode that is physically adapted to provide a first current pulse in response to a single received photon, wherein the negative-feedback avalanche diode comprises:
- (i) a photodiode comprising a doped region having a perimeter;
- and
- (ii) a negative feedback element, wherein the negative feedback element is electrically connected in series with the photodiode;
- wherein the photodiode and the negative feedback element are monolithically integrated such that the negative feedback element is disposed above the first doped region and is substantially located completely within the first perimeter;
- and
- (2) a read-out circuit;
- wherein the read-out circuit receives the first current pulse and provides a first output signal based on the first current pulse.
A method for determining the intensity of light incident on a pixel comprising a negative-feedback avalanche diode and a read-out circuit, wherein the method comprises:
- providing the negative-feedback avalanche diode such that it comprises:
- (i) a photodiode comprising a doped region having a perimeter;
- and
- (ii) a negative feedback element, wherein the negative feedback element is electrically connected in series with the photodiode:
- wherein the photodiode and the negative feedback element are monolithically integrated such that the negative feedback element is disposed above the first doped region and is substantially located completely within the first perimeter;
- and
- providing the read-out circuit such that it comprises a counter that is electrically coupled to the first photodetector;
- receiving the light at the pixel;
- generating a current pulse in response to a single photon contained in the light;
- and
- increasing the count of the counter when the counter receives the current pulse from the first photodetector.
Dependencies are inferred from the claim text.