Method of forming silicon oxide film and method of production of semiconductor memory device using this method
AssigneesTokyo Electron Limited, University of Tsukuba
InventorsYoshiro Kabe, Junichi Kitagawa, Kikuo Yamabe
Life of this patent
Estimating the term…
Abstract
To form a good quality silicon oxide film provided with both a superior Qbd characteristic and Rd characteristic, a wafer W is loaded into a plasma treatment apparatus where the surface of a silicon layer 501 of the wafer W is treated by plasma oxidation to form on the silicon layer 501 to a film thickness T1 a silicon oxide film 503. Next, the wafer W on which the silicon oxide film 503 is formed is transferred to a thermal oxidation treatment apparatus where the silicon oxide film 503 is treated by thermal oxidation to thereby form a silicon oxide film 505 having a target film thickness T2.
Claims19
A method of forming a silicon oxide film comprising:
- a first oxidation treatment step of treating silicon exposed at a surface of a treated object by plasma oxidation to form a silicon oxide film, said first oxidation treatment step is carried out by a plasma having a plasma density of 1×1010 to 5×1012/cm3 and a 0.7 to 2 eV low electron temperature;
- and
- a second oxidation treatment step of further treating said silicon oxide film by thermal oxidation, the silicon oxide film formed has a target film thickness in a range of 4 nm to 10 nm and said first oxidation treatment step forms a silicon oxide film by a film thickness in a range of 70% to 98% of the target film thickness, and said second oxidation treatment step increases the film until reaching the target film thickness.
A method of production of a semiconductor memory device including of a silicon layer on which a charge storage layer and a gate electrode are formed via a tunnel oxide film, the method comprising:
- forming said tunnel oxide film by a first oxidation treatment step of treating silicon exposed at a surface of a treated object by plasma oxidation to form a silicon oxide film, said first oxidation treatment step is carried out by a plasma having a plasma density of 1×1010 to 5×1012/cm3 and a 0.7 to 2 eV low electron temperature;
- and
- a second oxidation treatment step of further treating said silicon oxide film by thermal oxidation, the silicon oxide film formed has a target film thickness in a range of 4 nm to 10 nm and said first oxidation treatment step forms a silicon oxide film by a film thickness in a range of 70% to 98% of the target film thickness, and said second oxidation treatment step increases the film until reaching the target film thickness.
A non-transitory computer readable storage medium in which a control program operating on a computer is stored, said control program making the computer control a processing system so that, when run, the processing system having a plurality of treatment chambers for performing predetermined treatment on a treated object performs a method of forming a silicon oxide film, the method comprising:
- a first step of treating silicon exposed at a surface of the treated object by plasma oxidation to form a silicon oxide film, said first step is carried out by a plasma having a plasma density of 1×1010 to 5×1012/cm3 and a 0.7 to 2 eV low electron temperature;
- and
- a second step of treating said silicon oxide film in an oxidizing atmosphere by thermal oxidation, the silicon oxide film formed has a target film thickness in a range of 4 nm to 10 nm and said first step forms a silicon oxide film by a film thickness in a range of 70% to 98% of the target film thickness, and said second step increases the film until reaching the target film thickness.
Dependencies are inferred from the claim text.