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US 8,026,183 B2Granted
Method of forming a resist pattern
AssigneeKabushiki Kaisha Toshiba
InventorKoutaro Sho
Life of this patent
Estimating the term…
Abstract
A lower-layer film to which a fluorine-doped polymer is added is formed on a film to be processed. The lower-layer film is baked. An intermediate film is formed on the lower-layer film. A resist film is formed on the intermediate film. The resist film is baked. A resist protection film is formed. The resist film is immersion-exposed. The resist film is developed to form a resist pattern.
Claims20
A method of forming a resist pattern, comprising:
- forming a lower-layer film to which a fluorine-doped polymer is added on a film to be processed on a substrate;
- baking the lower-layer film;
- forming a resist film on the lower-layer film;
- baking the resist film;
- forming a resist protection film on the resist film, the resist protection film contacting the lower-layer film, and an outer peripheral portion of the lower-layer film being exposed;
- immersion-exposing the resist film;
- and
- developing the resist film.
5 more elements
A method of forming a resist pattern, comprising:
- forming a lower-layer film to which a fluorine-doped polymer is added on a film to be processed on a substrate;
- baking the lower-layer film;
- forming a resist film on the lower-layer film;
- baking the resist film;
- immersion-exposing the resist film;
- and
- developing the resist film,
- wherein a contact angle of the lower-layer film with an immersion liquid used for the immersion exposure is set to 60° or more, and a retreating contact angle thereof is set to 70° or more.
5 more elements
Dependencies are inferred from the claim text.