Patterning method and integrated circuit structure
AssigneeMacronix International Co., Ltd.
InventorHang-Ting Lue
Life of this patent
Estimating the term…
Abstract
A patterning method is provided. First, a mask layer and a plurality of first transfer patterns are sequentially formed on a target layer. Thereafter, a plurality of second patterns is formed in the gaps between the first transfer patterns. Afterwards, a plurality of third transfer patterns is formed, wherein each of the third transfer patterns is in a gap between a first transfer pattern and a second transfer pattern adjacent to the first transfer pattern. A portion of the mask layer is then removed, using the first transfer patterns, the second transfer patterns and third transfer patterns as a mask, so as to form a patterned mask layer. Further, a portion of the target layer is removed using the patterned mask layer as a mask.
Claims20
A patterning method, comprising:
- forming a mask layer and a plurality of first transfer patterns sequentially on a target layer;
- performing a first conversion process to consume surfaces of the first transfer patterns, so as to form a plurality of first conversion patterns on the surfaces of the first transfer patterns;
- filling a plurality of second transfer patterns in gaps between the first conversion patterns;
- removing the first conversion patterns;
- performing a second conversion process to consume surfaces of the first transfer patterns and the second transfer patterns, so as to form a plurality of second conversion patterns on the surfaces of the first transfer patterns and the second transfer patterns;
- filling a plurality of third transfer patterns in gaps between the second conversion patterns;
- removing the second conversion patterns;
- removing a portion of the mask layer, using the first transfer patterns, the second transfer patterns and the third transfer patterns as a mask, so as to form a patterned mask layer;
- and
- removing a portion of the target layer using the patterned mask layer as a mask.
A patterning method, comprising:
- forming a mask layer and a plurality of first transfer patterns sequentially on a target layer;
- forming a plurality of second transfer patterns in gaps between the first transfer patterns;
- forming a plurality of third transfer patterns, each of which is in a gap between a first transfer pattern and a second transfer pattern,;
- removing a portion of the mask layer, using the first transfer patterns, the second transfer patterns and the third transfer patterns as a mask, wherein each of the second transfer patterns is located between two third transfer patterns, so as to form a patterned mask layer;
- and
- removing a portion of the target layer using the patterned mask layer as a mask.
Dependencies are inferred from the claim text.