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US 8,026,177 B2Granted
Silicon dioxide cantilever support and method for silicon etched structures
AssigneeTexas Instruments Incorporated
InventorsWalter B. Meinel, Kalin V. Lazarov, Brian E. Goodlin
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Abstract
A semiconductor device includes a semiconductor layer (2) having therein a cavity (4). A dielectric layer (3) is formed on the semiconductor layer. A plurality of etchant openings (24) extend through the dielectric layer for passage of etchant for etching the cavity. An SiO2 pillar (25) extends from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity. In one embodiment, a cap layer (34) on the dielectric layer covers the etchant openings.
Claims5
A method for making a semiconductor device, comprising:
- forming a deep trench in a semiconductor layer;
- filling the deep trench with SiO2;
- providing a dielectric layer on the semiconductor layer and the SiO2;
- forming a plurality of etchant openings through the dielectric layer, the etchant openings being proximate to the SiO2;
- and
- introducing etchant through the etchant openings to etch a cavity in the semiconductor layer and thereby expose the SiO2 as a SiO2 pillar extending from a bottom of the cavity to engage and support a portion of the dielectric layer extending over the cavity, to thereby increase robustness of the semiconductor device.
3 more elements
Dependencies are inferred from the claim text.