Sequential station tool for wet processing of semiconductor wafers
AssigneeNovellus Systems, Inc.
InventorsEvan E. Patton, Theodore Cacouris, Eliot Broadbent, Steven T. Mayer
Life of this patent
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Abstract
Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wafer uniformity, result quality, and overall wafer throughput. In one example, a copper electroplating module includes separate stations for wetting, initiation, seed layer repair, fill, overburden, reclaim, and rinse.
Claims20
An apparatus for processing a semiconductor wafer, the apparatus comprising:
- a module or a cluster tool containing a plurality of separate stations;
- wherein the plurality of separate stations is configured to perform a plurality of distinct processes;
- and
- a mechanism for transporting the semiconductor wafer to and from each station of the plurality of separate stations, wherein the plurality of separate stations comprises:
- (a) a wetting station configured for wetting the semiconductor wafer comprising a recessed feature without applying current to the wafer;
- (b) an electrofill station configured at least for receiving the pre-wetted wafer from the wetting station and for filling the recessed feature with copper;
- (c) a chemical metal etch station configured for wet metal etching copper;
- and
- (d) an electroplanarization station configured for electroplanarization of a copper layer on the semiconductor wafer after electrofilling.
An apparatus for processing a semiconductor wafer, the apparatus comprising:
- a module or a cluster tool containing a plurality of separate stations;
- wherein the plurality of separate stations is configured to perform a plurality of distinct processes;
- and
- a mechanism for transporting the semiconductor wafer to and from each station of the plurality of separate stations, wherein the plurality of separate stations comprises:
- (a) a wetting station configured for wetting the semiconductor wafer comprising a recessed feature without applying current to the wafer;
- (b) an electrofill station configured at least for receiving the pre-wetted wafer from the wetting station and for filling the recessed feature with copper;
- (c) a chemical metal etch station configured for wet metal etching copper;
- and
- (d) an edge bevel removal station configured for removing copper from the wafer's edge bevel after electrofilling.
A method of processing a semiconductor wafer having a recessed feature the method comprising:
- (a) providing the wafer having a recessed feature to a wetting station in a module or a cluster tool, said module or cluster tool containing a plurality of separate stations including an electrofill station and a chemical metal etch station;
- (b) in the wetting station, wetting the wafer without applying current to the wafer;
- (c) transferring the wetted wafer from the wetting station to the electrofill station;
- (d) in the electrofill station, filling the recessed feature with copper;
- (e) transferring the wafer to the chemical metal etch station;
- (f) in the chemical metal etch station, wet etching copper from the wafer;
- and
- (g) transferring the wafer to an electroplanarization station and electroplanarizing the wafer after (c).
A method of processing a semiconductor wafer having a recessed feature the method comprising:
- (a) providing the wafer having a recessed feature to a wetting station in a module or a cluster tool, said module or cluster tool containing a plurality of separate stations including an electrofill station and a chemical metal etch station;
- (b) in the wetting station, wetting the wafer without applying current to the wafer;
- (c) transferring the wetted wafer from the wetting station to the electrofill station;
- (d) in the electrofill station, filling the recessed feature with copper;
- (e) transferring the wafer to the chemical metal etch station;
- (f) in the chemical metal etch station, wet etching copper from the wafer;
- and
- (g) transferring the wafer to an edge bevel removal (EBR) station and removing copper from wafer's edge bevel in the EBR station.
Dependencies are inferred from the claim text.