Method of fabricating metal interconnection and method of fabricating image sensor using the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJeong-Ho Lee, Young-Hoon Park, Sang-Il Jung, Jun-Seok Yang, An-Chul Shin, Min-Young Jung
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Abstract
A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
Claims11
A method of fabricating a metal interconnection, comprising:
- forming a interlayer dielectric layer on a substrate;
- forming an interconnection formation region in the interlayer dielectric layer by plasma etching;
- performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed, wherein the UV treatment is performed at a temperature between about 50° C. to about 200° C. for about 10 seconds to about 300 seconds to cure damage caused to the substrate by the plasma etching;
- and
- forming a metal interconnection in the interconnection formation region.
A method of fabricating an image sensor, comprising:
- forming a photoelectric transformation device on a substrate;
- forming an interlayer dielectric layer on the substrate which the photoelectric transformation device is formed on;
- forming an interconnection formation region in the interlayer dielectric layer by plasma etching;
- performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed, wherein the UV treatment is performed at a temperature between about 50° C. to about 200° C. for about 10 seconds to about 300 seconds to cure damage caused to the substrate by the plasma etching;
- and
- forming a metal interconnection in the interconnection formation region.
A method of fabricating a metal interconnection, comprising:
- forming a interlayer dielectric layer on a substrate;
- forming an interconnection formation region in the interlayer dielectric layer by plasma etching;
- performing an ultraviolet (UV) treatment multiple times on the substrate after the interconnection formation region is formed, wherein the UV treatment is performed at a temperature between about 50° C. to about 200° C. for about 10 seconds to about 300 seconds to cure damage caused to the substrate by the plasma etching;
- and
- forming a metal interconnection in the interconnection formation region after the UV treatment has been performed the multiple times on the substrate.
Dependencies are inferred from the claim text.