Semiconductor device containing an aluminum tantalum carbonitride barrier film and method of forming
AssigneeTokyo Electron Limited
InventorsTadahiro Ishizaka, Shigeru Mizuno
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Abstract
The method includes providing a substrate containing a dielectric layer having a recessed feature and forming a aluminum tantalum carbonitride barrier film over a surface of the recessed feature. The aluminum tantalum carbonitride barrier film is formed by depositing a plurality of tantalum carbonitride films, and depositing aluminum between each of the plurality of tantalum carbonitride films. One embodiment further comprises depositing a Ru film on the aluminum tantalum carbonitride barrier film, depositing a Cu seed layer on the Ru film, and filling the recessed feature with bulk Cu. A semiconductor device containing an aluminum tantalum carbonitride barrier film is described.
Claims8
A method for fabricating an integrated circuit, the method comprising:
- providing a substrate containing a dielectric layer having a recessed feature;
- forming an aluminum tantalum carbonitride barrier film comprising at least 10 atomic percent aluminum over a surface of the recessed feature, the forming comprising:
- a) depositing a first tantalum carbonitride film,
- b) depositing aluminum on the first tantalum carbonitride film,
- c) optionally repeating steps a) and b) at least once, and
- d) depositing a second tantalum carbonitride film on the aluminum,
- wherein steps a) and d) include alternating exposures of a tantalum carbonitride precursor selected from Ta(NMe2)3(NCMe2Et), Ta(NEt2)5, Ta(NMe2)5, Ta(NEtMe)5, (tBuN)Ta(NMe2)3, (tBuN)Ta(NEt2)3, (tBuN)Ta(NEtMe)3, or (iPrN)Ta(NEt2)3, and a reducing gas comprising plasma excited H2, NH3, or plasma excited NH3, or a combination of two or more thereof,
- wherein step b) includes exposing the substrate to an aluminum precursor selected from AlMe3, AlEt3, AlMe2H, [Al(OsBu)3]4, Al(CH3COCHCOCH3)3, AlCl3, AlBr3, AlI3, Al(OiPr)3, [Al(NMe2)3]2, Al(iBu)2Cl, Al(iBu)3, Al(iBu)2H, AlEt2Cl, Et3Al2(OsBu)3, Al(THD)3, H3AlNMe3, H3AlNEt3, H3AlNMe2Et, or H3AlMeEt, and
- wherein the steps of depositing the first and second tantalum carbonitride films and depositing aluminum have no temporal overlap;
- depositing a Ru film on the aluminum tantalum carbonitride barrier film;
- depositing a Cu seed layer on the Ru film;
- and
- depositing bulk Cu onto the Cu seed layer in the recessed feature.
A method of forming a semiconductor device, the method comprising:
- providing a substrate containing a dielectric layer having a recessed feature;
- and
- forming an aluminum tantalum carbonitride barrier film over a surface of the recessed feature, the forming comprising:
- a) depositing a first tantalum carbonitride film,
- b) depositing aluminum on the first tantalum carbonitride film,
- c) optionally repeating steps a) and b) at least once, and
- d) depositing a second tantalum carbonitride film on the aluminum,
- wherein depositing the plurality of tantalum carbonitride films comprises exposing the substrate to a tantalum carbonitride precursor and a reducing gas during ALD, PEALD, CVD, or PECVD processing, wherein the tantalum carbonitride precursor comprises Ta—N intra-molecular bonds and is selected from Ta(NMe2)3(NCMe2Et), Ta(NEt2)5, Ta(NMe2)5, Ta(NEtMe)5, (tBuN)Ta(NMe2)3, (tBuN)Ta(NEt2)3, (tBuN)Ta(NEtMe)3, or (iPrN)Ta(NEt2)3, and wherein depositing the aluminum comprises exposing the substrate to an aluminum precursor selected from AlMe3, AlEt3, AlMe2H, [Al(OsBu)3]4, Al(CH3COCHCOCH3)3, AlCl3, AlBr3, AlI3, Al(OiPr)3, [Al(NMe2)3]2, Al(iBu)2Cl, Al(iBu)3, Al(iBu)2H, AlEt2Cl, Et3Al2(OsBu)3, Al(THD)3, H3AlNMe3, H3AlNEt3, H3AlNMe2Et, or H3AlMeEt2.
Dependencies are inferred from the claim text.