Back to results
US 8,026,167 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeDongbu HiTek Co., Ltd.
InventorsSang Wook Ryu, Jin Ho Park
Life of this patent
Estimating the term…
Abstract
A metal interconnection of semiconductor device and method for fabricating the same is provided. The semiconductor device can include a semiconductor substrate formed with device structures such as transistors. An interlayer dielectric layer can be formed on the semiconductor substrate with a metal interconnection formed therethrough. A spacer can be formed on at least a portion of a sidewall of the metal interconnection. A diffusion barrier can be formed on an upper surface of the metal interconnection.
Claims10
A method of manufacturing a semiconductor device, comprising:
- forming an interlayer dielectric layer on a semiconductor substrate;
- forming a metal interconnection through the interlayer dielectric layer;
- forming a spacer comprising Ta or TaN at a portion of a sidewall of the metal interconnection;
- and
- forming a diffusion barrier on an upper surface of the metal interconnection by depositing a diffusion barrier material on the metal interconnection having the spacer after forming the spacer at the portion of the sidewall of the metal interconnection.
2 more elements
Dependencies are inferred from the claim text.