Semiconductor device and method of manufacturing the same
AssigneeFujitsu Semiconductor Limited
InventorsSatoshi Takesako, Shinichi Akiyama, Tamotsu Owada
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Abstract
A method of manufacturing a semiconductor device, includes steps of forming an organic insulating film over a semiconductor substrate, irradiating an electron beam to a surface of the organic insulating film, forming recesses in the organic insulating film, forming a conductive material over the organic insulating film and in the recesses, and removing the conductive material on the organic insulating film by a polishing to expose the surface of the organic insulating film and to leave the conductive material buried in recesses of the organic insulating film.
Claims8
A method of manufacturing a semiconductor device, comprising:
- forming an organic insulating film over a semiconductor substrate;
- irradiating an electron beam to a surface of the organic insulating film;
- forming recesses in the organic insulating film;
- forming a conductive material over the organic insulating film and in the recesses;
- and
- removing the conductive material over the organic insulating film by polishing to expose the surface of the organic insulating film and to leave the conductive material buried in the recesses of the organic insulating film.
Dependencies are inferred from the claim text.