Method of manufacturing semiconductor device and substrate processing apparatus

A substrate processing apparatus, comprising:

• a processing chamber that processes a substrate;
• a vaporizing part that vaporizes a liquid source;
• a liquid source supply system that supplies the liquid source to the vaporizing part;
• a source gas supply system that supplies a source gas into the processing chamber, the source gas being obtained by vaporizing the liquid source by the vaporizing part;
• a reaction gas supply system that supplies a reaction gas into the processing chamber, the reaction as being different from the source gas;
• a solvent supply system that supplies a solvent into the vaporizing part, the solvent being capable of dissolving the liquid source;
• and
• a controller that controls the liquid source supply system, the vaporizing part, the source gas supply system, the solvent supply system, and the reaction gas supply system, so that supply of the source gas and supply of the reaction gas into the processing chamber are performed multiple number of times, and at that time, vaporizing operation of supplying the liquid source to the vaporizing part and vaporizing the liquid source is intermittently performed, and at least at a time other than a time of performing the vaporizing operation of the liquid source, the solvent is flowed to the vaporizing part at a first flow rate, and at the time other than the time of performing the vaporizing operation of the liquid source and every time performing the vaporizing operation of the liquid source a prescribed number of times, the solvent is flowed to the vaporizing part at a second flow rate larger than the first flow rate.