Back to results
US 8,026,152 B2Granted
Separation method of semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno, Yuugo Goto, Hideaki Kuwabara
Life of this patent
Estimating the term…
Abstract
It is an object to provide a semiconductor device integrating various elements without using a semiconductor substrate, and a method of manufacturing the same. According to the present invention, a layer to be separated including an inductor, a capacitor, a resistor element, a TFT element, an embedded wiring and the like, is formed over a substrate, separated from the substrate, and transferred onto a circuit board 100. An electrical conduction with a wiring pattern 114 provided in the circuit board 100 is made by a wire 112 or a solder 107, thereby forming a high frequency module or the like.
Claims21
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first metal film over a first substrate;
- forming a first silicon oxide film over the first metal film;
- forming a first functional circuit comprising a thin film transistor over the first silicon oxide film;
- forming a first metal oxide film between the first metal film and the first silicon oxide film by first heating;
- forming a first resin layer comprising a water soluble resin over the first functional circuit;
- bonding a third substrate to the first resin layer comprising the water soluble resin by using a first adhesive layer;
- separating the first functional circuit and the first silicon oxide film from the first substrate within the first metal oxide film, or at an interface between the first metal oxide film and the first silicon oxide film, or at an interface between the first metal oxide film and the first metal film;
- mounting the separated first functional circuit and the first silicon oxide film over a circuit board with a first adhesive agent;
- immersing the circuit board in water to remove the first resin layer comprising the water soluble resin;
- forming a second metal film over a second substrate;
- forming a second silicon oxide film over the second metal film;
- forming a second functional circuit comprising a passive element over the second silicon oxide film;
- forming a second metal oxide film between the second metal film and the second silicon oxide film by second heating;
- forming a second resin layer comprising a water soluble resin over the second functional circuit;
- bonding a fourth substrate to the second resin layer comprising the water soluble resin by using a second adhesive layer;
- separating the second functional circuit and the second silicon oxide film from the second substrate within the second metal oxide film, or at an interface between the second metal oxide film and the second silicon oxide film, or at an interface between the second metal oxide film and the second metal film;
- mounting the separated second functional circuit and the second silicon oxide film with a second adhesive agent over the circuit board, wherein the first functional circuit is mounted over the circuit board;
- and
- immersing the circuit board in water to remove the second resin layer comprising the water soluble resin.
16 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first metal film over a first substrate;
- forming a first silicon oxide film over the first metal film;
- forming a first functional circuit comprising a thin film transistor over the first silicon oxide film;
- forming a first metal oxide film between the first metal film and the first silicon oxide film by first heating;
- forming a first resin layer comprising a water soluble resin over the first functional circuit;
- bonding a third substrate to the first resin layer comprising the water soluble resin by using a first adhesive layer;
- separating the first functional circuit and the first silicon oxide film from the first substrate within the first metal oxide film, or at an interface between the first metal oxide film and the first silicon oxide film, or at an interface between the first metal oxide film and the first metal film;
- mounting the separated first functional circuit and the first silicon oxide film over a circuit board with a first adhesive agent;
- immersing the circuit board in water to remove the first resin layer comprising the water soluble resin;
- forming a second metal film over a second substrate;
- forming a second silicon oxide film over the second metal film;
- forming a second functional circuit comprising a passive element over the second silicon oxide film;
- forming a second metal oxide film between the second metal film and the second silicon oxide film by second heating;
- forming a second resin layer comprising a water soluble resin over the second functional circuit;
- bonding a fourth substrate to the second resin layer comprising the water soluble resin by using a second adhesive layer;
- separating the second functional circuit and the second silicon oxide film from the second substrate within the second metal oxide film, or at an interface between the second metal oxide film and the second silicon oxide film, or at an interface between the second metal oxide film and the second metal film;
- mounting the separated second functional circuit and the second silicon oxide film with a second adhesive agent over the circuit board, wherein the first functional circuit is mounted over the circuit board;
- and
- immersing the circuit board in water to remove the second resin layer comprising the water soluble resin,
- wherein the first metal film is a first film selected from the group consisting of a tungsten film, a nitride tungsten film, and a tungsten alloy film, and
- wherein the second metal film is a second film selected from the group consisting of a tungsten film, a nitride tungsten film, and a tungsten alloy film.
18 more elements
A method of manufacturing a semiconductor device comprising the steps of:
- forming a first metal film over a first substrate;
- forming a first silicon oxide film over the first metal film;
- forming a first functional circuit over the first silicon oxide film;
- forming a first metal oxide film between the first metal film and the first silicon oxide film by first heating;
- forming a first resin layer comprising a water soluble resin over the first functional circuit;
- bonding a third substrate to the first resin layer comprising the water soluble resin by using a first adhesive layer;
- separating the first functional circuit and the first silicon oxide film from the first substrate within the first metal oxide film, or at an interface between the first metal oxide film and the first silicon oxide film, or at an interface between the first metal oxide film and the first metal film;
- mounting the separated first functional circuit and the first silicon oxide film over a circuit board with a first adhesive agent;
- immersing the circuit board in water to remove the first resin layer comprising the water soluble resin;
- forming a second metal film over a second substrate;
- forming a second silicon oxide film over the second metal film;
- forming a second functional circuit over the second silicon oxide film;
- forming a second metal oxide film between the second metal film and the second silicon oxide film by second heating;
- forming a second resin layer comprising a water soluble resin over the second functional circuit;
- bonding a fourth substrate to the second resin layer comprising the water soluble resin by using a second adhesive layer;
- separating the second functional circuit and the second silicon oxide film from the second substrate within the second metal oxide film, or at an interface between the second metal oxide film and the second silicon oxide film, or at an interface between the second metal oxide film and the second metal film;
- mounting the separated second functional circuit and the second silicon oxide film with a second adhesive agent over the first functional circuit, wherein a first layer including the first functional circuit is fixed to a second layer including the second functional circuit with the second adhesive agent, and immersing the circuit board in water to remove the second resin layer comprising the water soluble resin.
14 more elements
Dependencies are inferred from the claim text.