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US 8,026,150 B2Granted
Semiconductor device manufacturing method and storage medium
AssigneeTokyo Electron Limited
InventorsReiko Sasahara, Jun Tamura, Shigeru Tahara
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Abstract
A method of manufacturing a semiconductor device, including an interlayer insulating layer having a dielectric constant of about 1, includes at least one of hydrophobically modifying an interlayer insulating film for insulating lines from each other, before forming air gaps in the interlayer insulating film, and hydrophobically modifying the lines, after forming the air gaps in the interlayer insulating film.
Claims11
A semiconductor device manufacturing method comprising:
- forming a film layer including a first interlayer insulating film on a semiconductor substrate;
- forming grooves and/or holes in the film layer by etching the film layer, wherein a first damage layer is formed on the film layer exposed by etching the film layer;
- hydrophobically modifying the first damage layer, thereby recovering the first damage layer;
- embedding lines in the grooves and/or holes where the first damage layer is recovered;
- forming air gaps between the lines by etching the film layer using the lines as a mask, wherein a second damage layer is formed on surfaces of the film layer and the lines exposed by forming the air gaps;
- hydrophobically modifying the second damage layer, thereby recovering the second damage layer;
- and then
- forming a second interlayer insulating film on the lines without filling the air gaps therebetween.
5 more elements
Dependencies are inferred from the claim text.