Method of fabricating a semiconductor microstructure
AssigneeSamsung Electronics Co., Ltd.
InventorsYongsoon Choi, Kyung-moon Byun, Eunkee Hong, Eun-kyung Baek
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Abstract
Provided is a method of fabricating a semiconductor microstructure, the method including forming a lower material layer on a semiconductor substrate, the lower material layer including a nitride of a Group III-element; forming a mold material layer on the lower material layer; forming an etching mask on the mold material layer, the etching mask being for forming a structure in the mold material layer; anisotropic-etching the mold material layer and the lower material layer by using the etching mask; and isotropic-etching the mold material layer and the lower material layer.
Claims11
A method of fabricating a semiconductor microstructure, the method comprising:
- forming a lower material layer on a semiconductor substrate, the lower material layer comprising a nitride of a Group III-element;
- forming a mold material layer on the lower material layer;
- forming an etching mask on the mold material layer, the etching mask being for forming a structure in the mold material layer;
- anisotropic-etching the mold material layer and the lower material layer by using the etching mask;
- and
- isotropic-etching the mold material layer and the lower material layer.
Dependencies are inferred from the claim text.