Methods of forming low hydrogen concentration charge-trapping layer structures for non-volatile memory

A method comprising:

• forming a bottom oxide layer in a dry atmosphere above a portion of a semiconductor substrate surface;
• forming a first charge-trapping nitride layer above the bottom oxide layer via low pressure chemical vapor deposition;
• annealing the bottom oxide layer and the first charge-trapping layer at a temperature of at least about 950° C. in a low hydrogen content atmosphere;
• forming a second charge-trapping nitride layer above the first charge-trapping layer via low pressure chemical vapor deposition, wherein the first charge-trapping layer and the second charge-trapping layer together constitute a data storage layer;
• and
• forming an upper oxide layer above the second charge-trapping layer via low pressure chemical vapor deposition.