Semiconductor device and method of self-confinement of conductive bump material during reflow without solder mask

A method of making a semiconductor device, comprising:

• providing a semiconductor die having a die bump pad;
• providing a substrate having a trace line with substrate bump pad;
• depositing conductive bump material on the substrate bump pad or die bump pad;
• mounting the semiconductor die over the substrate so that the conductive bump material is disposed between the die bump pad and substrate bump pad;
• and
• reflowing the conductive bump material without a solder mask around the die bump pad or substrate bump pad to form an interconnect, wherein the conductive bump material is self-confined within a footprint of the die bump pad or substrate bump pad during reflow, wherein an escape pitch of the trace line is given D+PLT+W/2, wherein D is a base diameter of the interconnect, PLT is die placement tolerance, and W is the width of the trace line.

A method of making a semiconductor device, comprising:

• providing a semiconductor die having a die bump pad;
• providing a substrate having a trace line with substrate bump pad;
• depositing conductive bump material on the substrate bump pad or die bump pad;
• mounting the semiconductor die over the substrate so that the conductive bump material is disposed between the die bump pad and substrate bump pad;
• and
• reflowing the conductive bump material without a solder mask around the die bump pad or substrate bump pad to form an interconnect, wherein the conductive bump material is self-confined within a footprint of the die bump pad or substrate bump pad during reflow, wherein an escape pitch of the trace line is given D/2+PLT+W/2, wherein D is a base diameter of the interconnect, PLT is die placement tolerance, and W is the width of the trace line.

A method of making a semiconductor device, comprising:

• providing a first semiconductor structure having a first bump pad;
• providing a second semiconductor structure having a second bump pad;
• depositing conductive bump material between the first and second bump pads;
• and
• reflowing the conductive bump material without a solder mask around the first and second bump pads to form an interconnect, wherein the conductive bump material is self-confined within a footprint of the first bump pad or second bump pad during reflow.