Method of fabricating semiconductor substrate and method of fabricating light emitting device

A method of fabricating a light emitting device, the method comprising:

• forming a first semiconductor layer on a first substrate;
• forming a metallic material layer on the first semiconductor layer;
• forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer;
• forming a first compound semiconductor layer on the second semiconductor layer;
• forming an active layer on the first compound semiconductor layer;
• forming a second compound semiconductor layer on the active layer;
• attaching a second substrate to the second compound semiconductor layer;
• and
• separating the first substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

A method of fabricating a semiconductor substrate, the method comprising:

• forming a first semiconductor layer on a substrate;
• forming a metallic material layer on the first semiconductor layer;
• forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer;
• and
• growing the void in the first semiconductor layer by heating the substrate after forming the second semiconductor layer.

A method of fabricating a light emitting device, the method comprising:

• forming a first semiconductor layer on a first substrate;
• forming a metallic material layer on the first semiconductor layer;
• forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer;
• forming a first compound semiconductor layer on the second semiconductor layer;
• forming an active layer on the first compound semiconductor layer;
• forming a second compound semiconductor layer on the active layer;
• attaching a second substrate to the second compound semiconductor layer;
• and
• growing the void in the first semiconductor layer by heating the first substrate after attaching the second substrate.

A method of fabricating a semiconductor substrate, the method comprising:

• forming a first semiconductor layer on a substrate;
• forming a metallic material layer on the first semiconductor layer;
• forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer;
• and
• evaporating reaction by-products of the metallic material layer and nitrogen to remove the reaction by-products formed during formation of the void.

A method of fabricating a light emitting device, the method comprising:

• forming a first semiconductor layer on a substrate;
• forming a metallic material layer on the first semiconductor layer;
• forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer;
• forming a first compound semiconductor layer on the second semiconductor layer;
• forming an active layer on the first compound semiconductor layer;
• forming a second compound semiconductor layer on the active layer;
• and
• evaporating reaction by-products of the metallic material layer and nitrogen to remove the reaction by-products formed during formation of the void.

A method of fabricating a light emitting device, the method comprising:

• forming, in a first chamber, a second semiconductor layer on a substrate comprising a first semiconductor layer and a metallic material layer on the first semiconductor layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer;
• transferring the substrate comprising the second semiconductor layer from the first chamber to a second chamber;
• and
• forming, in the second chamber, a compound semiconductor layer on the second semiconductor layer.