Resist pattern forming method, supercritical processing solution for lithography process, and antireflection film forming method
AssigneesNippon Telegraph and Telephone Corporation, Tokyo Ohka Kogyo Co., Ltd.
InventorsHideo Namatsu, Mitsuru Sato
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Abstract
A fine and high-accuracy pattern, which is also excellent in either or both of high sensitivity and etching resistance can be provided. Disclosed is a resist pattern forming method in which a single- or multi-layered film 2 is formed on a substrate 1 and a resist pattern is formed on the film 2 through a lithography technique including exposure and development, the method comprising performing supercritical processing in which the film 2 is brought into contact with a supercritical processing solution 5′ in which an organic matter 4 is dissolved before the exposure or development.
Claims8
A resist pattern forming method, which comprises the steps of:
- providing a single- or multi-layered film on a substrate;
- forming a resist pattern on the film through a lithography technique including exposure and development;
- and
- performing supercritical processing in which the film is brought into contact, before the exposure, with a supercritical processing solution in which an organic matter of at least one material selected from the group consisting of an etching resistance improver, a catalyst, a nitrogen-containing organic compound, an acidic compound, and a fullerene compound is dissolved.
Dependencies are inferred from the claim text.