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US 8,025,811 B2Granted
Composition for etching a metal hard mask material in semiconductor processing
AssigneeIntel Corporation
InventorsNabil G. Mistkawi, Lourdes Dominguez
Life of this patent
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Abstract
An etching solution for a metal hard mask. The etching solution comprises a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor. The etching solution also comprises a surfactant agent, a carboxylic acid, and a copper corrosion inhibitor. The etching solution is selectively toward etching the metal hard mask material (e.g., Titanium) while suppressing Tungsten, Copper, oxide dielectric material, and carbon doped oxide.
Claims17
A wet etching solution capable of selectively etching Titanium comprising:
- products of a mixture of a dilute HF (hydrofluoric acid) and a silicon containing precursor selected from the group consisting of Methyltrimethoxysilane, Methyltriethoxysilane (MTES), Tetramethoxysilane (TMOS), Tetraethoxysilane (TEOS), and Tetrapropoxysilane;
- a surfactant agent;
- a carboxylic acid;
- and
- a copper corrosion inhibitor.
2 more elements
A homogeneous wet etching solution comprising:
- products of a mixture of:
- a dilute HF (hydrofluoric acid);
- and
- MTES (Methyltriethoxysilane);
- and
- a copper corrosion inhibitor.
3 more elements
Dependencies are inferred from the claim text.