Semiconductor device fabrication equipment for performing PEOX process and method including cleaning the equipment with remotely produced plasma

A method of cleaning semiconductor device fabrication equipment having a processing chamber in which a PEOX process using SiH4 is carried out, and a remote plasma generator connected to the processing chamber, the method comprising:

• supplying N2 into the processing chamber of the semiconductor device fabrication equipment through a main process gas supply piping connected to the processing chamber and through which process gas, comprising SiH4, is supplied into the processing chamber during the processing of a substrate;
• supplying NF3 into a reactor of the remote plasma generator of the semiconductor device fabrication equipment and forming plasma in the reactor using the NF3, to thereby clean the reactor of the remote plasma generator and the processing chamber while the N2 is flowing through the main process gas supply piping into the processing chamber;
• after the reactor of the remote plasma generator and the processing chamber are cleaned, supplying N2 into the processing chamber to purge the processing chamber;
• supplying Ar to the remote plasma generator and generating plasma using the Ar to remove any NF3 remaining in the remote plasma generator and the processing chamber while the process chamber is being purged by the N2;
• and
• subsequently performing a full flush operation a predetermined number of times to remove from the processing chamber any gases remaining in the process chamber.