Coating and developing system, coating and developing method and storage medium
AssigneeTokyo Electron Limited
InventorsYasushi Hayashida, Yoshitaka Hara
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokyo Electron Limited
InventorsYasushi Hayashida, Yoshitaka Hara
Estimating the term…
Wafers A1 to A10 of a first lot A and wafers B1 to B10 of a second lot B are processed by a second heating unit at different temperatures, respectively. A wafer W is carried in a processing block included in coating and developing system along a route passing a temperature control unit CPL2, a coating unit BCT, a heating unit LHP2, a temperature control unit CPL3, a coating unit COT, a heating unit LHP3, and a cooling unit COL in that order. The process temperature of the heating unit LHP3 is changed after the last wafer A10 of the first lot A has been processed by the heating unit LHP3. The wafers of the second lot B are carried according to a carrying schedule such that carrying cycles succeeding a carrying cycle in which the first substrate B1 of the second lot B is carried to the second temperature conditioning unit CPL3 carry the substrates B of the second lot B succeeding the first substrate B1 and processed by a heating process by the heating unit LHP2 in due order to a buffer unit BF2, and the wafers B held in the buffer unit BF2 are carried in due order to the downstream modules after the process temperature of the heating unit LHP3 has been changed.
A coating and developing system comprising:
Dependencies are inferred from the claim text.