Anti-fuse repair control circuit and semiconductor device including DRAM having the same

A semiconductor device including a plurality of DRAMs in a package in which the plurality of DRAMs shares at least a command and a repair address, and each DRAM independently receives a data mask signal, and the DRAM comprises:

• a data mask signal input unit configured to buffer the data mask signal, and output a buffered data mask signal and a pump enable signal in response to a test control signal for a repair;
• a repair voltage pumping unit configured to pump a supply voltage and a back-bias voltage to generate a repair voltage in response to the pump enable signal;
• a cell address enable unit configured to enable a cell address of a cell to be repaired in response to a repair address and the buffered data mask signal;
• a repair enable unit configured to code the cell address outputted from the cell address enable unit to generate a repair enable signal and a drive signal according to whether or not a cell corresponding to the cell address is enabled, wherein the repair enable unit comprises a plurality of row repair enable units whose number corresponds to the number of a row address and a plurality of column repair enable units whose number corresponds to the number of a column address;
• and
• a repair unit configured to supply the repair voltage to the cell when the repair enable signal and the cell address are enabled in a state that the drive signal is enabled.