Phase change memory devices with reduced programming current

A phase change memory device comprising:

• a conducting electrode in a dielectric layer;
• a bottom electrode over the conducting electrode;
• a phase change layer over the bottom electrode, wherein the bottom electrode is substantially co-terminus with the phase change layer, wherein the conducting electrode has a top interface having a first area, and wherein an interface of the bottom electrode and the phase change layer has a second area, and wherein the second area and the first area have a ratio greater than one;
• and
• a top electrode over the phase change layer, wherein resistivities of the bottom electrode and the top electrode are each greater than a resistivity of the phase change layer in a crystalline state, and wherein at least one of the bottom electrode and the top electrode comprises a material selected from the group consisting essentially of TiAlN, carbon, crystalline materials, and combinations thereof.