US 8,020,128 B2 · Scaling of bipolar transistors

Abstract

Bipolar transistor structures, methods of designing and fabricating bipolar transistors, methods of designing circuits having bipolar transistors. The method of designing the bipolar transistor includes: selecting an initial design of a bipolar transistor; scaling the initial design of the bipolar transistor to generate a scaled design of the bipolar transistor; determining if stress compensation of the scaled design of the bipolar transistor is required based on dimensions of an emitter of the bipolar transistor after the scaling; and if stress compensation of the scaled design of the bipolar transistor is required then adjusting a layout of a trench isolation layout level of the scaled design relative to a layout of an emitter layout level of the scaled design to generate a stress compensated scaled design of the bipolar transistor.

Claims12

Dependent claims

A method, comprising:

selecting an initial design of a bipolar transistor;
scaling said initial design of said bipolar transistor to generate a scaled design of said bipolar transistor;
determining if stress compensation of said scaled design of said bipolar transistor is required based on dimensions of an emitter of said bipolar transistor after said scaling;
and
if stress compensation of said scaled design of said bipolar transistor is required then adjusting a layout of a trench isolation layout level of said scaled design relative to a layout of an emitter layout level of said scaled design to generate a stress compensated scaled design of said bipolar transistor.

2 more elements

A method, comprising:

(a) selecting a circuit design;
(b) using one or more computer processors, extracting layout levels and corresponding layout parameters of bipolar transistors from said circuit design;
(c) using said one or more computer processors, determining device parameters of said bipolar transistors from said layout parameters;
(d) using said one or more computer processors, performing a circuit simulation of said circuit design;
(e) determining, based on results of said simulation, if said circuit design meets predetermined performance goals;
(f) if said performance goals are not met, then for at least one of said bipolar transistors adjusting a layout of a trench isolation layout level of said at least one bipolar transistor relative to a layout of an emitter layout level of said at least one bipolar transistor;
and
(g) repeating steps (b) through (f) until said performance goals are met or a predetermined number of times.

5 more elements

Dependencies are inferred from the claim text.

Scaling of bipolar transistors

Life of this patent

Scaling of bipolar transistors

Life of this patent

Abstract

Claims12