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US 8,019,913 B2Granted
Dynamically setting burst length of double data rate memory device by applying signal to at least one external pin during a read or write transaction
AssigneeRound Rock Research, LLC
InventorChristopher S. Johnson
Life of this patent
Estimating the term…
Abstract
One or more external control pins and/or addressing pins on a memory device are used to set one or both of a burst length and burst type of the memory device.
Claims20
A method comprising:
- receiving a read or write command request on a double data rate memory device having separate groups of external pins adapted to receive address, data, and control information;
- and
- setting a burst type of the double data rate memory device to one of sequential or interleaved according to a signal input to an address pin of the double data rate memory device proximate in time to receipt of the read or write command.
A method comprising:
- setting a burst type of a double data rate memory device by applying a signal to a single one of a plurality of external pins of the double data rate memory device, the plurality of external pins being grouped for address, control and data input;
- processing a read command on the double data rate memory device according to the burst type set at a single external pin of the double data rate memory device;
- and
- outputting interleaved or sequentially output data from the double data rate memory device depending on the burst type set.
1 more element
A double data rate memory device comprising:
- separate external pin connections assigned for address, control and data input;
- and
- a control logic circuit for controlling operations of the double data rate memory device, the control logic circuit being responsive to a signal received at one of the external pin connections of the double data rate memory device to set a burst type on the double data rate memory device, wherein depending on the signals input to the single external address pin, the burst type is set to interleaved or sequential.
A system, comprising:
- a double data rate memory device having separate groups of external pins adapted to receive addressing, data, and control information;
- and
- a memory controller adapted to set a burst type of the double data rate memory to interleaved or sequential by sending a signal through one of the external pins of the double data rate memory device, such that when a read command is sent by the controller, depending on the burst type set, the double data rate memory device returns interleaved or sequentially output data to the memory controller.
Dependencies are inferred from the claim text.