Component of quartz glass for use in semiconductor manufacture and method for producing the same

A method for producing a component of quartz glass for use in semiconductor manufacture, said component comprising quartz glass, said quartz glass having a near-surface region having a co-dopant of a first dopant and of a second oxidic dopant, said second dopant containing one or more rare-earth metals in a concentration of 0.1-3% by wt., each based on the total mass of SiO2 and said first and second dopants and wherein the first dopant is nitrogen and the quartz glass has a mean content of metastable hydroxyl groups of less than 30 wtppm, said method comprising:

• providing SiO2 raw material in particulate form, providing the SiO2 raw material with the second dopant comprising one or more rare-earth metal oxides in a concentration of 0.1-3% by wt, each based on the total mass of SiO2 and said first and second dopants, and sintering or melting the SiO2 raw material provided with the second dopant so as to obtain a quartz glass blank, wherein the quartz glass blank is provided with the first dopant in the form of nitrogen by carrying out sintering or melting thereof in a nitrogen-containing atmosphere by way of gas pressure sintering:
• and
• wherein the gas pressure sintering includes the following method steps:
• (a) heating the SiO2 raw material provided with the second dopant to a temperature ranging between 1000° C. and 1500° C. while applying and maintaining a negative pressure,
• (b) holding the SiO2 raw material at the temperature in a nitrogen atmosphere at an overpressure in the range between 2 bar and 20 bar for a holding period of at least 30 min,
• (c) melting the SiO2 raw material at a temperature in the range between 1550° C. and 1800° C. at a negative pressure and for a melting period of at least 30 min while forming the quartz glass blank, and
• (d) cooling the quartz glass blank.