Pattern test method of testing, in only specific region, defect of pattern on sample formed by charged beam lithography apparatus
AssigneeKabushiki Kaisha Toshiba
InventorYumi Watanabe
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AssigneeKabushiki Kaisha Toshiba
InventorYumi Watanabe
Estimating the term…
Disclosed is a pattern test method in which a drawing region is divided into a plurality of deflection regions determined by the deflection width of a deflector of a charged beam lithography apparatus, the charged beam lithography apparatus draws a pattern in each divided deflection region on the basis of pattern design data to obtain a sample, and a defect of the pattern on the sample is tested. The method determines the coordinates of a connecting portion of the deflection regions, divides the pattern design data into boundary region pattern data as the connecting portion of the deflection regions and pattern data except for the boundary region pattern data, and obtains image data of the pattern formed on the sample. The method then compares the boundary region pattern data with the image data.
A computer-implemented pattern test method in which a drawing region is divided into a plurality of deflection regions determined by a deflection width of a deflector of a charged beam lithography apparatus, the charged beam lithography apparatus draws a pattern in each divided deflection region on the basis of pattern design data to obtain a sample, and a defect of the pattern on the sample is tested, the pattern test method comprising:
A computer-implemented pattern test method in which a drawing region is divided into a plurality of deflection regions determined by a deflection width of a deflector of a charged beam lithography apparatus, the charged beam lithography apparatus draws a pattern in each divided deflection region on the basis of pattern design data to obtain a sample, and a defect of the pattern on the sample is tested, the pattern test method comprising:
A computer-implemented pattern test method in which a drawing region is divided into a plurality of deflection regions determined by a deflection width of a deflector of a charged beam lithography apparatus, the charged beam lithography apparatus draws a pattern in each divided deflection region on the basis of pattern design data to obtain a sample, and a defect of the pattern on the sample is tested, the pattern test method comprising:
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