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US 8,014,209 B2Granted
Programming and selectively erasing non-volatile storage
AssigneeSanDisk Technologies LLC
InventorsJeffrey W Lutze, Yan Li
Life of this patent
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Abstract
A non-volatile storage system performs programming for a plurality of non-volatile storage elements and selectively performs re-erasing of at least a subset of the non-volatile storage elements that were supposed to remain erased, without intentionally erasing programmed data.
Claims28
A method for operating non-volatile storage, comprising:
- erasing non-volatile storage elements;
- and
- performing programming for said non-volatile storage elements and selectively performing re-erasing of at least a subset of non-volatile storage elements that were supposed to remain erased without intentionally erasing programmed data.
A method for operating non-volatile storage, comprising:
- erasing a set of non-volatile storage elements, said non-volatile storage elements are flash memory devices connected to a common word line;
- receiving data to be stored by said set of non-volatile storage elements, said data indicates that some of said non-volatile storage elements are to be programmed and some of said non-volatile storage elements are to remain erased;
- and
- programming said data into said set of non-volatile storage elements and selectively performing re-erasing of at least a subset of non-volatile storage elements that were supposed to remain erased without intentionally erasing non-volatile storage element storing properly programmed data.
1 more element
A method for operating non-volatile storage, comprising:
- erasing a set of non-volatile storage elements connected to a first control line and a set of non-volatile storage elements connected to a second control line;
- performing a first pass of a first multi-pass programming process for non-volatile storage elements connected to said first control line;
- performing a first pass of a second multi-pass programming process for said non-volatile storage elements connected to said second control line;
- after performing said first pass of said second multi-pass programming process, selectively performing re-erasing of at least a subset of said non-volatile storage elements connected to said first control line that were supposed to remain erased;
- selectively performing re-erasing of at least a subset of said non-volatile storage elements connected to said second control line that were supposed to remain erased;
- after selectively performing re-erasing of at least a subset of said non-volatile storage elements connected to said first control line, performing a second pass of said first multi-pass programming process for said non-volatile storage elements connected to said first control line;
- and
- performing a second pass of said second multi-pass programming process for said non-volatile storage elements connected to said second control line.
5 more elements
Dependencies are inferred from the claim text.