Threshold voltage digitizer for array of programmable threshold transistors

A method for an integrated circuit, the method comprising:

• generating a first voltage based on a plurality of codewords;
• outputting the first voltage to a first word line communicating with a first set of transistors, wherein each of the first set of transistors has a plurality of programmable threshold voltages;
• determining values of the threshold voltages of the first set of transistors based on (i) the codewords and (ii) currents sensed through the first set of transistors in response to the first voltage being output to the first word line;
• and
• adjusting the values of the threshold voltages of the first set of transistors based on at least one of (i) locations of the first set of transistors on the first word line and (ii) a temperature of the integrated circuit.

A system comprising:

• a programming module configured to program a first set of transistors to a predetermined threshold voltage, wherein the first set of transistors communicates with a first word line of a memory array;
• a voltage generator configured to
• output a first voltage to the first word line at a first time, and
• output a second voltage to the first word line at a second time,
• wherein the first voltage and the second voltage are generated based on codewords,
• wherein the first voltage includes a first linear ramp voltage,
• wherein the second voltage includes a second linear ramp voltage, and
• wherein the second linear ramp voltage has a different ramp rate than the first linear ramp voltage;
• and
• a control module configured to
• store a first set of the codewords when currents sensed through the first set of transistors are greater than or equal to the predetermined current in response to the first voltage being output to the first word line,
• store a second set of the codewords when currents sensed through the first set of transistors are greater than or equal to the predetermined current in response to the second voltage being output to the first word line, and
• generate differences between the first set of the codewords and the second set of the codewords.

A method comprising:

• programming a first set of transistors to a predetermined threshold voltage, wherein the first set of transistors communicates with a first word line of a memory array;
• generating a first voltage and a second voltage based on codewords,
• wherein the first voltage includes a first linear ramp voltage,
• wherein the second voltage includes a second linear ramp voltage, and
• wherein the second linear ramp voltage has a different ramp rate than the first linear ramp voltage;
• outputting the first voltage to the first word line at a first time;
• outputting the second voltage to the first word line at a second time;
• storing a first set of the codewords when currents sensed through the first set of transistors are greater than or equal to the predetermined current in response to the first voltage being output to the first word line;
• storing a second set of the codewords when currents sensed through the first set of transistors are greater than or equal to the predetermined current in response to the second voltage being output to the first word line;
• and
• generating differences between the first set of the codewords and the second set of the codewords.