System for verifying non-volatile storage using different voltages
AssigneeSanDisk Technologies LLC
InventorGerrit Jan Hemink
Life of this patent
Estimating the term…
Abstract
When performing a data sensing operation, including a verify operation during programming of non-volatile storage elements (or, in some cases, during a read operation after programming), a first voltage is used for unselected word lines that have been subjected to a programming operation and a second voltage is used for unselected word lines that have not been subjected to a programming operation. In some embodiments, the second voltage is lower than the first voltage.
Claims29
A method for using non-volatile storage, comprising:
- programming a particular non-volatile storage element of a group of connected non-volatile storage elements, the programming of the particular non-volatile storage element includes verifying the programming of the particular non-volatile storage element;
- programming additional non-volatile storage elements of the group of connected non-volatile storage elements after the programming of the particular non-volatile storage element;
- and
- reading the particular non-volatile storage element after the programming of the additional non-volatile storage elements, the verifying of the programming of the particular non-volatile storage element includes providing different pass voltages to other non-volatile storage elements of the group and the reading of the particular non-volatile storage element includes providing a common pass voltage to the other non-volatile storage elements of the group.
A method for using non-volatile storage, comprising:
- programming a particular non-volatile storage element of a group of connected non-volatile storage elements, the programming of the particular non-volatile storage element includes verifying the programming of the particular non-volatile storage element;
- programming additional non-volatile storage elements of the group of connected non-volatile storage elements after the programming of the particular non-volatile storage element;
- and
- reading the particular non-volatile storage element after the programming of the additional non-volatile storage elements, the verifying of the programming of the particular non-volatile storage element includes providing a first set of pass voltages to other non-volatile storage elements of the group and the reading of the particular non-volatile storage element includes providing a second set of one or more pass voltages to the other non-volatile storage elements of the group, the first set of pass voltages is different than the second set of one or more pass voltages.
A non-volatile storage system, comprising:
- a group of connected non-volatile storage elements;
- and
- a managing circuit in communication with the group of connected non-volatile storage elements, the managing circuit programs a particular non-volatile storage element of the group of connected non-volatile storage elements, the programming of the particular non-volatile storage element includes verifying the programming of the particular non-volatile storage element, the managing circuit programs additional non-volatile storage elements of the group of connected non-volatile storage elements after the programming of the particular non-volatile storage element, the managing circuit reads the particular non-volatile storage element after the programming of the additional non-volatile storage elements, the verifying of the programming of the particular non-volatile storage element includes the managing circuit providing different pass voltages to other non-volatile storage elements of the group and the managing circuit reads the particular non-volatile storage element by providing a common pass voltage to the other non-volatile storage elements of the group.
A non-volatile storage system, comprising:
- a group of connected non-volatile storage elements;
- and
- a managing circuit in communication with the group of connected non-volatile storage elements, the managing circuit programs a particular non-volatile storage element of the group of connected non-volatile storage elements, the programming of the particular non-volatile storage element includes verifying the programming of the particular non-volatile storage element, the managing circuit programs additional non-volatile storage elements of the group of connected non-volatile storage elements after the programming of the particular non-volatile storage element, the managing circuit reads the particular non-volatile storage element after the programming of the additional non-volatile storage elements, the verifying of the programming of the particular non-volatile storage element includes the managing circuit providing a first set of pass voltages to other non-volatile storage elements of the group, the reading of the particular non-volatile storage element includes the managing circuit providing a second set of one or more pass voltages to the other non-volatile storage elements of the group, the first set of pass voltages is different than the second set of one or more pass voltages.
Dependencies are inferred from the claim text.