Memory device and methods for fabricating and operating the same
AssigneeMacronix International Co., Ltd.
InventorsI-Chen Yang, Yao-Wen Chang, Tao-Cheng Lu, Guan-Wei Wu, Tao-Yuan Lin, Po-Chou Chen
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Abstract
The memory device is described, which includes a substrate, a conductive layer, a plurality of charge storage layers and a plurality of doped regions. The substrate has a plurality of trenches formed therein. The conductive layer is disposed on the substrate and fills the trenches. The charge storage layers are disposed between the substrate and the conductive layer in the trenches respectively, wherein the charge storage layers are separated from each other. The doped regions are configured in the substrate under bottoms of the trenches, respectively.
Claims31
A memory device, comprising:
- a substrate having a plurality of trenches formed therein;
- a conductive layer, disposed over the substrate and filling the trenches;
- a plurality of charge storage layers, disposed between the substrate and the conductive layer in the trenches respectively, wherein the charge storage layers are separated from each other;
- a gate dielectric layer disposed on a surface of the substrate between two adjacent trenches;
- and
- a plurality of doped regions, configured in the substrate under bottoms of the trenches respectively.
A method for fabricating a memory device, comprising:
- providing a substrate;
- forming a plurality of trenches in the substrate;
- forming a plurality of doped regions in the substrate under bottoms of the trenches respectively;
- forming a plurality of charge storage layers on surfaces of the trenches respectively, wherein the charge storage layers are separated from each other;
- forming a conductive layer over the substrate, wherein the conductive layer fills the trenches;
- and
- forming a gate dielectric layer on the surface of the substrate between two adjacent trenches.
Dependencies are inferred from the claim text.