Non-volatile semiconductor memory device

A non-volatile semiconductor memory device comprising:

• a memory array which includes:
• a plurality of non-volatile memory cells arranged in an array extending in X and Y directions, for storing data by locally accumulating electric charge;
• a plurality of word lines extending in the X direction in a region where the plurality of non-volatile memory cells are provided;
• and
• a plurality of bit lines and a plurality of main bit lines extending in the Y direction in the region where the plurality of non-volatile memory cells are provided, wherein:
• the memory array includes one or more usable regions which can store data, and one or more isolation regions which cannot store data,
• the one or more isolation regions are arranged in parallel to a bit-line direction, isolating the one or more usable regions from each other,
• the plurality of bit lines and the plurality of main bit lines are provided in the one or more usable regions,
• each of the plurality of bit lines is connected via a first select transistor to a corresponding one of the plurality of main bit lines,
• a first isolation region bit line is provided in the one or more isolation regions, and
• at least a first main bit line of the plurality of main bit lines is connected via a corresponding first select transistor to the first isolation region bit line in addition to a corresponding one of the plurality of bit lines provided in the one or more usable regions.