Nonvolatile memory device extracting parameters and nonvolatile memory system including the same
AssigneeSamsung Electronics Co., Ltd.
InventorKi-Tae Park
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AssigneeSamsung Electronics Co., Ltd.
InventorKi-Tae Park
Estimating the term…
The nonvolatile memory device includes a memory cell array having a plurality of memory blocks and a control logic circuit configured to store a parameter to access at least one of the plurality of memory blocks, configured to detect a variation of the parameter while accessing the at least one the memory block, and configured to store the varied parameter into the memory cell array in accordance with a result of the detection, wherein the control logic circuit is configured to utilize the varied parameter, which is stored in the memory cell array, while accessing the at least one memory block.
A nonvolatile memory device comprising:
A nonvolatile memory system comprising:
Dependencies are inferred from the claim text.
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Power supply arrangements , e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels: voltage…
Arrangements for selecting an address in a digital store: group selection circuits, e.g. for memory block selection, chip selection, array selection
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor: using storage elements…
Using charge storage in a floating gate: programming or writing circuits; Data input circuits
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This U.S. non-provisional patent application claims priority under 35 U.S.C. §119 of Korean Patent Application No. 10-2008-74746 filed on Jul. 30, 2008, the entire contents of which are incorporated herein by reference.
Example embodiments disclosed herein are related to nonvolatile memory devices, for example, to a flash memory device extracting parameters therefrom.
Nonvolatile memory devices, such as flash memory devices, are electrically erasable and programmable read-only memories (EEPROMs) in which a plurality of memory regions are erased or written with data by one-time operation of programming. A traditional EEPROM is operable such that a single memory region is erasable or programmable at a time. Thus, the flash memory device operates more rapidly and effectively in reading and writing data when systems employing the flash memory device read/write data from/into different memory regions at the same time. Many types of flash memory devices or EEPROMs are usually configured in structure such that insulation films enclosing charge storage elements used for storing data are inevitably worn out after a specific number of operations.
Non-limiting and non-exhaustive example embodiments will be described with reference to the following figures, wherein like reference numerals refer to like parts throughout the various figures unless otherwise specified. In the figures:
FIG. 1 is a block diagram of a memory system according to example embodiments;
FIG. 2 is another block diagram of a memory system according to example embodiments;
Example embodiments will now be described more fully with reference to the accompanying drawings. In the drawings, the thicknesses of layers and regions may be exaggerated for clarity.
It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of example embodiments. As used herein, the term “and/or” includes any and all combinations of one or more of the associated listed items.
It will be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present. Other words used to describe the relationship between elements should be interpreted in a like fashion (e.g., “between” versus “directly between”, “adjacent” versus “directly adjacent”, etc.).