Memory system with switch element

A memory system comprising:

• a switch element with resistive change having a first side and a second side;
• a cell transistor having a gate terminal is a junction field effect transistor;
• a memory cell, having the switch element and the cell transistor, with the gate terminal connected to the second side is a resistive change memory cell;
• a voltage source connected to a word line connected with the memory cell at the first side, the voltage source provides a negative voltage value;
• a bit line connected with the memory cell provides a current path;
• and
• a reference source connected with only a source of the memory cell is a reference voltage.

A method for manufacturing a memory system comprising:

• forming a metal-insulator-metal element having a first side and a second side;
• forming a junction field effect transistor having a gate terminal, a source terminal, and a drain terminal;
• forming a memory cell, having the metal-insulator-metal element and the junction field effect transistor, with the gate terminal connected to the second side;
• connecting a word line and the memory cell at the first side, including connecting a voltage source to the word line, the voltage source provides a negative voltage value;
• connecting a bit line and the memory cell with the junction field effect transistor, wherein the junction field effect transistor has a first block select connected to the gate terminal, the source terminal connected to the memory cell, and the drain terminal connected to the bit line;
• connecting a ground only to the source terminal of the junction field effect transistor of the memory cell wherein the junction field effect transistor has a second block select connected to the gate terminal, the source terminal connected to the ground, and the drain terminal connected to the memory cell;
• and
• connecting a sense circuit and the bit line.

A memory system comprising:

• a metal-insulator-metal element having a first side and a second side;
• a junction field effect transistor having a gate terminal, a source terminal, and a drain terminal;
• a memory cell, having the metal-insulator-metal element and the junction field effect transistor, with the gate terminal connected to the second side;
• a word line connected to the memory cell at the first side, a voltage source connected to the word line, the voltage source provides a negative voltage value;
• a bit line connected to the memory cell with the junction field effect transistor, wherein the junction field effect transistor has a first block select connected to the gate terminal, the source terminal connected to the memory cell, and the drain terminal connected to the bit line;
• a ground only to the source terminal of the junction field effect transistor of the memory cell wherein the junction field effect transistor has a second block select connected to the gate terminal, the source terminal connected to the ground, and the drain terminal connected to the memory cell;
• and
• a sense circuit connected to the bit line.