Method for driving phase change memory device
AssigneeHynix Semiconductor Inc.
InventorsHee Bok Kang, Suk Kyoung Hong
Life of this patent
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Abstract
A method is disclosed for driving a phase change memory device including a phase change resistor. The method includes applying a trigger voltage to the phase change resistor for a first write time to preheat the phase change resistor, applying a first write voltage to the phase change resistor for a second write time to control a first state of the phase change resistor, and applying a second voltage to the phase change resistor for a third write time to control a second state of the phase change resistor.
Claims18
A method for driving a phase change memory device including a phase change resistor, the method comprising:
- applying a trigger voltage to the phase change resistor for a first write time to preheat the phase change resistor;
- applying a first write voltage to the phase change resistor for a second write time to control the phase change resistor at a first state;
- and
- applying a second write voltage to the phase change resistor for a third write time to control the phase change resistor at a second state, wherein a value of the trigger voltage is the same for both the first and second states, and wherein the trigger voltage having a voltage level higher than that of the first write voltage and lower than that of the second write voltage.
Dependencies are inferred from the claim text.