Electronic device and production method thereof

Abstract

Electronic device 1 comprises an element body 10, comprising a dielectric layer 2 constituted by a dielectric ceramic composition, and a terminal electrode 4, formed outside of the element body 10. The dielectric ceramic composition comprised a main component including barium titanate; a first subcomponent including at least one oxide of Mg and Ca; a second subcomponent including SiO2; a third subcomponent including at least one oxide of Mn and Cr; and a fourth subcomponent including an oxide of rare earth elements, wherein the net valence of Mn and/or Cr in the third subcomponent is 2.2 to 2.4. According to the electronic device 1, both high temperature accelerated lifetime characteristics and capacity stress aging characteristics can be improved in a balanced manner.

Dependencies are inferred from the claim text.