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US 8,013,974 B2Granted
Thin film transistor substrate and fabricating method thereof
AssigneeLG Display Co., Ltd.
InventorJi Hyun Jung
Life of this patent
Estimating the term…
Abstract
A thin film transistor substrate and a fabricating method that includes an opening hole that separates a gate shorting line connected to a gate shorting bar used upon a lighting-inspecting of a gate line into an odd and an even gate shorting line is provided.
Claims15
A method of fabricating a thin film transistor substrate, comprising:
- forming gate lines on a substrate;
- forming data lines that cross the gate lines with a gate insulating film therebetween, and forming a data shorting bar connected to an odd and an even data shorting line extended from a data pad connected to the data line;
- forming a thin film transistor at an intersection of the gate line and the data lines;
- forming a protective film that covers a thin film transistor formed on a gate insulating film;
- forming a pixel electrode connected, via a contact hole that passes through the protective film, to the thin film transistor;
- forming gate shorting bar connected to an odd and an even gate shorting line extended from a gate pad connected to the gate line;
- and
- forming an open hole that separates either the odd or even gate shorting line from the gate shorting bar on the protective film,
- wherein the gate shorting, bar includes a first gate shorting bar connected to the odd gate shorting line that extends from the pate pad and a second gate shorting bar connected to the even gate shorting line separated from the first gate shorting bar by an open hole;
- wherein the even gate shorting line is separated from the first pate shorting bar by the open hole,
- wherein the second gate shorting bar is simultaneously formed along with the data lines and is formed to cross with the gate shorting lines with having the gate insulating film therebetween,
- wherein the gate insulating film is located between the first pate shorting bar and the second gate shorting bar.
9 more elements
A method of fabricating a thin film transistor substrate, comprising:
- forming a first conductive pattern that includes gate lines, a gate electrode connected to the gate lines and a first gate shorting bar connected to the odd gate shorting line among the gate shorting lines extended from a lower gate pad electrode connected to the gate line on a substrate;
- forming a gate insulating film on a substrate provided with the first conductive pattern;
- forming a semiconductor layer that includes a channel and a second conductive pattern including data lines, a source/drain pattern connected to the data lines, a data shorting bar connected to a data shorting line that extends from a lower data pad connected to the data line and a second gate shorting bar connected to the even gate shorting lines that extends from the lower gate pad electrode on the gate insulating film;
- forming a protective film on a gate insulating film provided with the semiconductor layer and the second conductive pattern;
- forming a contact hole that exposes the drain electrode, the lower gate pad electrode, the lower data pad electrode and the even gate shorting lines and open hole area that separates the even gate shorting lines from the first gate shorting bar on the protective film;
- and
- after a transparent conductive layer is entirely formed on the protective film, forming an open hole that separates the even gate shorting lines, a semiconductor pattern that includes a channel and a third conductive pattern including a source electrode connected to the data lines, a drain electrode opposed to a source electrode having the channel therebetween, a pixel electrode connected to the drain electrode, an upper gate pad electrode and an upper data pad electrode,
- wherein the second gate shorting bar is simultaneously formed along with the data lines and is formed to cross with the gate shorting lines with having the gate insulating film therebetween,
- wherein the gate insulating film is located between the first gate shorting bar and the second gate shorting bar,
- wherein the open hole separates the even gate shorting line and the first gate shorting bar on the protective film.
7 more elements
Dependencies are inferred from the claim text.