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AssigneesRenesas Electronics Corporation, NEC Corporation
InventorsTaras Kushta, Kaoru Narita, Tomoyuki Kaneko, Shin-ichi Ogou
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According to one embodiment, a broadband transition to joint a via structure and a planar transmission line in a multilayer substrate is formed as an intermediate connection between the signal via pad and the planar transmission line disposed at the same conductor layer. The transverse dimensions of the transition are equal to the via pad diameter at the one end and strip width at another end; The length of the transition can be equal to the characteristic dimensions of the clearance hole in the direction of the planar transmission line or defined as providing the minimal excess inductive reactance in time-domain according to numerical diagrams obtained by three-dimensional full-wave simulations.
A broadband transition structure for a connection of a via structure to a planar transmission line in a multilayer substrate, said via structure comprising a signal via, comprising:
Dependencies are inferred from the claim text.