Radio frequency power amplifier

A radio frequency power amplifier which amplifies radio frequency signals of two frequency bands, said radio frequency power amplifier comprising:

• a first power amplifying circuit which linearly amplifies a first radio frequency signal of a first frequency band;
• a second power amplifying circuit which linearly amplifies a second radio frequency signal of a second frequency band lower than the first frequency band;
• a third power amplifying circuit which nonlinearly amplifies a third radio frequency signal of the first frequency band;
• and
• a fourth power amplifying circuit which nonlinearly amplifies a fourth radio frequency signal of the second frequency band,
• wherein said first power amplifying circuit includes:
• a first input pad formed on a semiconductor substrate;
• a first input line formed on said semiconductor substrate and having one end connected to said first input pad;
• a first power amplifier formed on said semiconductor substrate and connected to the other end of said first input line;
• a first output line formed on said semiconductor substrate and having one end connected to said first power amplifier;
• and
• a first output pad formed on said semiconductor substrate and connected to the other end of said first output line,
• said second power amplifying circuit includes:
• a second input pad formed on said semiconductor substrate;
• a second input line formed on said semiconductor substrate and having one end connected to said second input pad;
• a second power amplifier formed on said semiconductor substrate and connected to the other end of said second input line;
• a second output line formed on said semiconductor substrate and having one end connected to said second power amplifier;
• and
• a second output pad formed on said semiconductor substrate and connected to the other end of said second output line,
• said third power amplifying circuit includes:
• a third input pad formed on said semiconductor substrate;
• a third input line formed on said semiconductor substrate and having one end connected to said third input pad;
• a third power amplifier formed on said semiconductor substrate and connected to the other end of said third input line;
• a third output line formed on said semiconductor substrate and having one end connected to said third power amplifier;
• and
• a third output pad formed on said semiconductor substrate and connected to the other end of said third output line,
• said fourth power amplifying circuit includes:
• a fourth input pad formed on said semiconductor substrate;
• a fourth input line formed on said semiconductor substrate and having one end connected to said fourth input pad;
• a fourth power amplifier formed on said semiconductor substrate and connected to the other end of said fourth input line;
• a fourth output line formed on said semiconductor substrate and having one end connected to said fourth power amplifier;
• and
• a fourth output pad formed on said semiconductor substrate and connected to the other end of said fourth output line,
• said first output pad and said second output pad are disposed next to each other,
• said third output pad and said fourth output pad are disposed next to each other,
• said first to fourth input lines do not cross each other on said semiconductor substrate, and
• said first to fourth output lines do not cross each other on said semiconductor substrate.