US 8,013,665 B2Granted

Semiconductor device

AssigneeSemiconductor Energy Laboratory Co., Ltd.

InventorsChikako Matsumoto, Kiyoshi Kato

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Abstract

To provide a semiconductor device of which a manufacturing process is simplified and which has a boosting circuit in which the area of a capacitor element is reduced. The present invention includes a plurality of rectifying elements which is connected in series and has a rectifying function from a first input terminal portion to an output terminal portion; a first wiring and a second wiring, which are connected to a second input terminal portion, into which a signal and a signal obtained by inverting the signal are respectively input; and a boosting circuit including a plurality of capacitor elements each having a first electrode, an insulating film, and a second electrode and storing a boosted potential. The plurality of capacitor elements includes a capacitor element in which the first electrode and the second electrode are formed using conductive films, and a capacitor element in which at least the second electrode is formed using a semiconductor film. In the plurality of capacitor elements, at least a capacitor element in a first stage is a capacitor element in which the first electrode and the second electrode are formed using conductive films.

Claims13

Dependent claims

A semiconductor device including a boosting circuit, the boosting circuit comprising:

a plurality of rectifying elements connected in series between an input terminal portion and an output terminal portion of the boosting circuit, each of the rectifying elements including an input portion and an output portion, with an input portion of a first one of the rectifying elements being connected to the input terminal portion;
and
a plurality of capacitor elements each including a first electrode, a second electrode, and an insulating film interposed between the first electrode and the second electrode,
wherein the first electrode of a first one of the plurality of capacitor elements is connected to an output portion of the first one of the plurality of rectifying elements,
wherein the first electrode of a k-th one of the plurality of capacitor elements is connected to an output portion of a k-th one of the rectifying elements and to an input portion of a (k+1)th one of the rectifying elements (where k is an integer of 2≦k≦(n−1)),
wherein only the first one of the plurality of capacitor elements does not comprise a semiconductor film as the first electrode and the second electrode, and
wherein the first electrode of at least another one of the plurality of capacitor elements comprises a first conductive film and the second electrode of at least another one of the plurality of capacitor elements comprises a semiconductor film.

4 more elements

A semiconductor device including a boosting circuit, the boosting circuit comprising:

at least first, second and third rectifying elements connected in series between an input terminal portion and an output terminal portion of the boosting circuit, each of the rectifying elements including an input portion and an output portion, with an input portion of the first one of the rectifying elements being connected to the input terminal portion;
and
at least first and second capacitor elements each including a first electrode, a second electrode, and an insulating film interposed between the first electrode and the second electrode,
wherein the first electrode of the first capacitor element is connected to an output portion of the first rectifying element,
wherein the first electrode of the second capacitor element is connected to an output portion of the second rectifying element and to an input portion of the third rectifying element,
wherein only the first capacitor element does not comprise a semiconductor film as the first electrode and the second electrode, and
wherein the first electrode of the second capacitor element comprises a first conductive film and the second electrode of the second capacitor element comprises a semiconductor film.

4 more elements

Dependencies are inferred from the claim text.