MOS integrated circuit and electronic equipment including the same
AssigneePanasonic Corporation
InventorMasahiro Aoike
Life of this patent
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Abstract
A MOS integrated circuit includes: a voltage-to-current conversion circuit configured to convert first and second voltages to a first current having a current value corresponding to the first voltage and a second current having a current value corresponding to the second voltage; and a current comparison circuit configured to compare the respective current values of the first and second currents and to output a voltage showing the comparison result. Oxide films of MOS transistors of the current comparison circuit are thinner than oxide films of MOS transistors of the voltage-to-current conversion circuit.
Claims9
A MOS integrated circuit for comparing respective voltage values of first and second voltages, comprising:
- a voltage-to-current conversion circuit configured to convert the first and second voltages to a first current having a current value corresponding to the first voltage and a second current having a current value corresponding to the second voltage;
- and
- a current comparison circuit configured to compare the respective current values of the first and second currents and to output a voltage showing the comparison result, wherein
- gate insulating films of MOS transistors of the current comparison circuit are thinner than gate insulating films of MOS transistors of the voltage-to-current conversion circuit.
Dependencies are inferred from the claim text.