Phosphor material, coating phosphor composition, and light emitting device
AssigneesLG Innotek Co., Ltd., Force4 Corp.
InventorsChoong Youl Kim, Sung Min Kong, Hee Seok Choi, Seung Hyok Park, Ho Shin Yoon, Chang Hee Lee
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Abstract
Disclosed are a phosphor, a coating phosphor composition, a method for preparing the phosphor, and a light emitting device. A silicate-based phosphor is expressed in a chemical formula of (4-x-y-z)SrO.xBaO.zCaO.aMgO.2(SiO2).bM2O3:yEu, wherein M is at least one of Y, Ce, La, Nd, Gd, Tb, Yb or Lu, in which 0<x≦3.95, 0<y≦1, 0≦z<3.95, x+y+z<4, 0<a<2, and 0<b<1.
Claims32
A silicate-based phosphor expressed in a chemical formula of (4-x-y-z)SrO.xBaO.zCaO.aMgO.2(SiO2).bM2O3:yEu, wherein M is at least one of Y, Ce, La, Nd, Gd, Tb, Yb or Lu, in which 0<x≦3.95, 0<y≦1, 0≦z<3.95, x+y+z<4, 0<a<2, and 0<b<1.
A phosphor obtained by mixing a silicate-based first phosphor, which is expressed in a chemical formula of (4-x-y-z)SrO.xBaO.zCaO.aMgO.2(SiO2).bM2O3:yEu (M is at least one of Y, Ce, La, Nd, Gd, Tb, Yb or Lu, 0<x≦3.95, 0<y≦1, 0≦z<3.95, x+y+z<4, 0<a<2, and 0<b<1), with a garnet-based phosphor.
A phosphor obtained by mixing a silicate-based first phosphor, which is expressed in a chemical formula of (4-x-y-z)SrO.xBaO.zCaO.aMgO.2(SiO2).bM2O3:yEu (M is at least one of Y, Ce, La, Nd, Gd, Tb, Yb or Lu, 0<x≦3.95, 0<y≦1, 0≦z<3.95, x+y+z<4, 0<a<2, and 0<b<1), with a nitride-based phosphor.
A phosphor obtained by mixing a silicate-based first phosphor, which is expressed in a chemical formula of (4-x-y-z)SrO.xBaO.zCaO.aMgO.2(SiO2).bM2O3:yEu (M is at least one of Y, Ce, La, Nd, Gd, Tb, Yb, or Lu, 0<x≦3.95, 0<y≦1, 0≦z<3.95, x+y+z<4, 0<a<2, and 0<b<1), with a sulfide-based phosphor.
A coating phosphor composition comprising transparent resin and a silicate-based phosphor expressed in a chemical formula of (4-x-y-z)SrO.xBaO.zCaO.aMgO.2(SiO2).bM2O3:yEu (M is at least one of Y, Ce, La, Nd, Gd, Tb, Yb, or Lu, 0<x≦3.95, 0<y≦1, 0≦z<3.95, x+y+z<4, 0<a<2, and 0<b<1).
A light emitting device comprising:
- a light emitting diode chip that emits light having a light emitting peak wavelength in a range of 430 nm to 480 nm;
- a substrate that electrically connects to the light emitting diode chip;
- a molding member used to mold the light emitting diode chip;
- and
- a phosphor that is entirely or partially dispersed in the molding member, wherein the phosphor is a silicate-based phosphor expressed in a chemical formula of (4-x-y-z)SrO.xBaO.zCaO.aMgO.2(SiO2).bM2O3:yEu (M is at least one of Y, Ce, La, Nd, Gd, Tb, Yb or Lu, 0<x≦3.95, 0<y≦1, 0≦z<3.95, x+y+z<4, 0<a<2, and 0<b<1).
A light emitting device comprising:
- a light emitting diode chip that emits light having a light emitting peak wavelength in a range of 430 nm to 480 nm;
- a substrate that electrically connects to the light emitting diode chip;
- a molding member used to mold the light emitting diode chip;
- and
- a phosphor that is entirely or partially dispersed in the molding member, wherein the phosphor includes a silicate-based first phosphor, which is expressed in a chemical formula of (4-x-y-z)SrO.xBaO.zCaO.aMgO.2(SiO2).bM2O3:yEu (M is at least one of Y, Ce, La, Nd, Gd, Tb, Yb or Lu, 0<x≦3.95, 0<y≦1, 0≦z<3.95, x+y+z<4, 0<a<2, and 0<b<1), and a garnet-based second phosphor.
A light emitting device comprising:
- a light emitting diode chip that emits light having a light emitting peak wavelength in a range of 430 nm to 480 nm;
- a substrate that electrically connects to the light emitting diode chip;
- a molding member used to mold the light emitting diode chip;
- and
- a phosphor that is entirely or partially dispersed in the molding member, wherein the phosphor comprises a silicate-based first phosphor, which is expressed in a chemical formula of (4-x-y-z)SrO.xBaO.zCaO.aMgO.2(SiO2).bM2O3:yEu (M is at least one of Y, Ce, La, Nd, Gd, Tb, Yb or Lu, 0<x≦3.95, 0<y≦1, 0≦z<3.95, x+y+z<4, 0<a<2, and 0<b<1), and a nitride-based second phosphor.
A light emitting device comprising:
- a light emitting diode chip that emits light having a light emitting peak wavelength in a range of 430 nm to 480 nm;
- a substrate that electrically connects to the light emitting diode chip;
- a molding member used to mold the light emitting diode chip;
- and
- a phosphor that is entirely or partially dispersed in the molding member, wherein the phosphor comprises a silicate-based first phosphor, which is expressed in a chemical formula of (4-x-y-z)SrO.xBaO.zCaO.aMgO.2(SiO2).bM2O3:yEu (M is at least one of Y, Ce, La, Nd, Gd, Tb, Yb or Lu, 0<x≦3.95, 0<y≦1, 0≦z<3.95, x+y+z<4, 0<a<2, and 0<b<1), and a sulfide-based second phosphor.
Dependencies are inferred from the claim text.