Low cost substrates and method of forming such substrates
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsBich-Yen Nguyen, Carlos Mazure
Life of this patent
Estimating the term…
Abstract
In one embodiment, the invention provides engineered substrates having a support with surface pits, an intermediate layer of amorphous material arranged on the surface of the support so as to at least partially fill the surface pits, and a top layer arranged on the intermediate layer. The invention also provides methods for manufacturing the engineered substrates which deposit an intermediate layer on a pitted surface of a support so as to at least partially fill the surface pits, then anneal the intermediate layer, then assemble a donor substrate with the annealed intermediate layer to form an intermediate structure, and finally reduce the thickness of the donor substrate portion of the intermediate structure in order to form the engineered substrate.
Claims19
A substrate comprising:
- a support that includes surface pits of lateral and vertical dimensions both of which are between approximately 50 nm and the approximately 200 nm;
- an intermediate layer comprising an amorphous material arranged on the surface of the support so as to at least partially or completely fill the surface pits;
- and
- a top layer arranged on the intermediate layer,
- wherein the support and the top layer each comprises mono-crystalline silicon.
A substrate comprising:
- a support that includes surface pits of lateral and vertical dimensions both of which are between approximately 50 nm and the approximately 200 nm;
- an intermediate layer comprising an amorphous material arranged on the surface of the support so as to at least partially or completely fill the surface pits;
- and
- a top layer arranged on the intermediate layer,
- wherein the support is a substrate comprising semiconductor material which support has been reclaimed after a prior use in a layer transfer process which causes the surface pits and
- wherein the surface pits are completely filled by the amorphous material of the intermediate layer.
A method of manufacturing a substrate comprising:
- treating a support comprising mono-crystalline silicon having surface pits of lateral and vertical dimensions, both of which are between approximately 50 nm and approximately 200 nm, by depositing an intermediate layer comprising an amorphous material on the surface of the support so as to at least partially or completely fill the pits;
- annealing the intermediate layer;
- assembling a donor substrate with the annealed intermediate layer to form an intermediate structure;
- and
- reducing the thickness of the donor substrate portion of the intermediate structure to form the substrate.
A method of manufacturing a substrate comprising:
- providing a support from a reclaimed substrate comprising semiconductor material that has been subjected to a layer transfer process which causes surface pits of lateral and vertical dimensions, wherein both pits have dimensions of between approximately 50 nm and approximately 200 nm,
- treating the surface pits of the support by depositing an intermediate layer comprising an amorphous material on the surface of the support so as to at least partially or completely fill the pits;
- annealing the intermediate layer;
- assembling a donor substrate with the annealed intermediate layer to form an intermediate structure;
- and
- reducing the thickness of the donor substrate portion of the intermediate structure to form the substrate.
Dependencies are inferred from the claim text.