Photoelectric conversion device and fabrication method therefor
AssigneeCanon Kabushiki Kaisha
InventorMasatsugu Itahashi
Life of this patent
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Abstract
A photoelectric conversion device comprises a high-refractive-index portion at a position close to a photoelectric conversion element therein. And, the high-refractive-index portion has first and second horizontal cross-section surfaces. The first cross-section surface is at a position closer to the photoelectric conversion element rather than the second cross-section surface, and is larger than an area of the second cross-section surface, so as to guide an incident light into the photoelectric conversion element without reflection.
Claims19
A photoelectric conversion device comprising:
- a semiconductor substrate;
- a photoelectric conversion element arranged in the semiconductor substrate;
- a plurality of MOS transistors each having a gate electrode for reading an electric charge from the photoelectric conversion element;
- a plurality of insulating layers arranged at a position higher than that of the gate electrodes;
- a multilayer structure having patterned layers arranged at a portion higher than that of the gate electrodes;
- and
- a plurality of high-refractive-index portions each having a refractive index higher than that of the plurality of insulating layers so as to guide light into the photoelectric conversion element by a reflection at corresponding interfaces between the plurality of insulating layers and the plurality of high-refractive-index portions,
- wherein a first high-refractive-index portion at a position closest to the photoelectric conversion element among the plurality of high-refractive-index portions has a first cross-section surface and a second cross-section surface horizontal to a light receiving surface of the photoelectric conversion element, the first and second cross-section surfaces being located at positions closer to the photoelectric conversion element than a patterned layer at a position closest to the photoelectric conversion element among the patterned layers, and
- wherein an area of the first cross-section surface at a position closer to the photoelectric conversion element than a position of the second cross-section surface is larger than an area of the second cross-section surface.
A photoelectric conversion device comprising:
- a substrate having a photoelectric conversion element;
- a plurality of insulating layers disposed on the substrate, the plurality of insulating layers including a first insulating layer and a second insulating layer, the first insulating layer being arranged between the second insulating layer and the substrate;
- a plurality of conductive patterned layers including a first conductive patterned layer and a second conductive patterned layer, the first conductive patterned layer being arranged between the first insulating layer and the second insulating layer, and the second insulating layer being arranged between the first conductive patterned layer and the second conductive patterned layer;
- and
- a plurality of high-refractive-index portions disposed on the substrate correspondingly to the photoelectric conversion element, the plurality of high-refractive-index portions having a first high-refractive-index portion and a second high-refractive-index portion, the first high-refractive-index portion having a refractive index higher than that of the first insulating layer, and the second high-refractive-index portion having a refractive index higher than that of the second insulating layer,
- wherein the first high-refractive-index portion is arranged so that the first insulating layer is present around the first high-refractive-index portion in a first plane and a second plane horizontal to a light receiving surface of the photoelectric conversion element, the second plane being between the light receiving surface and the first plane, and
- the second high-refractive-index portion is arranged so that the second insulation layer is present around the second high-refractive-index portion in a plane horizontal to the light receiving surface, and
- a cross-section area of the first high-refractive-index portion in the second plane is larger than a cross-section area of the first high-refractive-index portion in the first plane.
Dependencies are inferred from the claim text.