Transistors with multilayered dielectric films
AssigneeSamsung Electronics Co., Ltd.
InventorsHa-Jin Lim, Jong-Ho Lee, Hyung-Suk Jung
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Abstract
Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50% the thickness of the multilayered dielectric film and that comprises a metal oxide, a metal silicate, an aluminate, or a mixture thereof, and an upper dielectric film on the lower dielectric film, the upper dielectric film comprising a Group III metal oxide, Group III metal nitride, Group XIII metal oxide or Group XIII metal nitride. A gate electrode is provided on the multilayered dielectric film.
Claims20
A transistor comprising:
- a multilayered dielectric film on a channel region defined between a source region and a drain region, the multilayered dielectric film comprising,
- a lower dielectric film comprising a silicate of a first metal, and
- an upper dielectric film that is directly on an upper surface of the lower dielectric film, the upper surface of the lower dielectric film including the silicate of the first metal, the upper dielectric film comprising a silicate of the first metal in combination with a Group III or Group XIII metal;
- and
- a gate electrode on the multilayered dielectric film.
A transistor comprising:
- a multilayered dielectric film on a channel region defined between a source region and a drain region, the multilayered dielectric film comprising,
- a lower dielectric film comprising a silicate of a first metal, and
- an upper dielectric film on the lower dielectric film, the upper dielectric film comprising a silicate of the first metal and a Group III or Group XIII metal;
- and
- a gate electrode on the multilayered dielectric film
- wherein the multilayer dielectric film has a first thickness, and
- wherein the silicate of the first metal in the lower dielectric film has a second thickness that is at least half of the first thickness.
A transistor comprising:
- a multilayered dielectric film on a channel region defined between a source region and a drain region, the multilayered dielectric film comprising,
- a lower dielectric film comprising a silicate of a first metal, and
- an upper dielectric film on the lower dielectric film, the upper dielectric film comprising a silicate of the first metal and a Group III or Group XIII metal;
- and
- a gate electrode on the multilayered dielectric film
- wherein the silicate of the first metal is represented by M1-xSixO2, where x is has a value in a range from 0.1 to 0.99, and wherein the first metal M is hafnium, zirconium, tantalum, titanium, strontium, barium, scandium, yttrium or lanthanum.
A transistor comprising:
- a multilayered dielectric film on a channel region defined between a source region and a drain region, the multilayered dielectric film comprising,
- a first dielectric film comprising SiO2 or SiON on an upper surface of the channel region;
- a second dielectric film that comprises a silicate of a first metal on an upper surface of the first dielectric film;
- and
- a third dielectric film that comprises a silicate of the first metal in combination with a Group III or Group XIII metal on an upper surface of the second dielectric film;
- and
- a gate electrode on an upper surface of the multilayered dielectric film.
Dependencies are inferred from the claim text.