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US 8,013,401 B2Granted
Selectively depositing aluminum in a replacement metal gate process
AssigneeIntel Corporation
InventorsAdrien R. Lavoie, Mark Doczy
Life of this patent
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Abstract
A method for carrying out a replacement metal gate process comprises providing a transistor in a reactor, wherein the transistor includes a gate stack, removing at least a portion of the gate stack to expose a surface of a barrier layer, causing a temperature of the reactor be less than or equal to 150° C., introducing methylpyrrolidine:alane (MPA) proximate to the surface of the barrier layer, and carrying out a CVD process to deposit aluminum metal on the barrier layer using a bottom-up deposition mechanism.
Claims5
A MOS transistor comprising:
- a gate stack that comprises:
- a high-k gate dielectric layer formed on a substrate,
- a workfunction metal layer formed on the gate dielectric layer,
- a barrier layer formed in the workfunction metal layer,
- an aluminum containing seed layer formed on the barrier layer from MPA, and
- an aluminum metal layer on the seed layer;
- a pair of spacers formed on laterally opposite sides of the gate stack;
- and
- a source region and a drain region formed in the substrate.
6 more elements
Dependencies are inferred from the claim text.