Three-dimensional nonvolatile memory devices having sub-divided active bars and methods of manufacturing such devices

A nonvolatile memory device, comprising:

• a plurality of gates that are vertically stacked on a semiconductor substrate;
• an active bar which penetrates the plurality of gates and extends vertically from the semiconductor substrate;
• and
• gate dielectric between the active bar and the plurality of gates,
• wherein the active bar comprises the same material as the semiconductor substrate, and includes a plurality of bars that are vertically connected with each other, and the plurality of bars include at least one inclined bar that has a cross-sectional area which increases with increasing distance from the semiconductor substrate,
• wherein the active bar includes an open interior, and wherein an insulator is disposed within the open interior of the active bar.

A nonvolatile memory device, comprising:

• gate patterns and insulation patterns alternatingly stacked on top of a semiconductor substrate;
• an active bar which is disposed on the semiconductor substrate and extends upward along sidewalls of the gate patterns and sidewalls of the insulation patterns;
• and
• a gate dielectric between the gate patterns and the active bar,
• wherein the active bar comprises a first sub-active bar, a second sub-active bar on top of the first sub-active bar, and a first pad portion between the first sub-active bar and the second sub-active bar that electrically connects the first sub-active bar and the second sub-active bar, and
• wherein an area of a top surface of the first pad portion is greater than an area of a top surface of the first sub-active bar.