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US 8,013,388 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorYong Won Seo
Life of this patent
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Abstract
Disclosed herein is a method of manufacturing a semiconductor device that is adapted to improve the production yield. The method generally includes etching a semiconductor substrate to form a trench, filling the trench with a conductive material, separating the filled conductive material to form a plurality of gate patterns and a bit line contact region, and etching the substrate to define an isolation region.
Claims9
A method of manufacturing a semiconductor device the method comprising:
- etching a semiconductor substrate to form a trench;
- filing the trench with a conductive material;
- exposing the semiconductor substrate through planarization after filling the trench with the conductive material;
- separating the conductive material to form a bitline contact region and a plurality of buried gate patterns;
- and
- etching the semiconductor substrate to define an isolation region.
3 more elements
A semiconductor device comprising:
- a plurality of gate patterns filled in a semiconductor substrate;
- an isolation region formed by etching the semiconductor substrate;
- a bit line contact of filled type defining the plurality of gate patterns;
- and
- a storage node contact separated from each other by the isolation region.
2 more elements
Dependencies are inferred from the claim text.