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US 8,013,369 B2Granted
Photoelectric conversion apparatus and imaging system using photoelectric conversion apparatus
AssigneeCanon Kabushiki Kaisha
InventorsKoichiro Iwata, Hidekazu Takahashi
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Abstract
A photoelectric conversion apparatus includes a photoelectric conversion unit with a semiconductor region of a first conduction type, an amplifying transistor, and a contact. The contact supplies, via a semiconductor region of a second conduction type arranged along a side surface and a bottom surface of an element isolation region, a reference voltage to the semiconductor region of the second conduction-type arranged below source and drain regions of the amplifying transistor in a region below a gate electrode of the amplifying transistor.
Claims13
A photoelectric conversion apparatus comprising:
- a semiconductor substrate of a first conduction type;
- a first semiconductor region of the first conduction type;
- a second semiconductor region of a second conduction type, which isolates the semiconductor substrate and the first semiconductor region from each other;
- a pixel unit in which pixels are arranged two-dimensionally, each pixel including:
- a photoelectric conversion unit with a third semiconductor region of the first conduction type having an impurity concentration higher than that of the first semiconductor region and a fourth semiconductor region of the second conduction type,
- an amplifying transistor for readout signals from the photoelectric conversion unit, and
- an element isolation region that electrically isolates an active region where the photoelectric conversion unit is arranged from an active region where the amplifying transistor is arranged;
- a fifth semiconductor region of the second conduction type, which is arranged in the first semiconductor region along a side surface and a bottom surface of the element isolation region of each pixel;
- and
- a sixth semiconductor region of the second conduction type, which is arranged between source and drain regions of an amplifying transistor of each pixel and is the second semiconductor region, in a region below a gate electrode of the amplifying transistor,
- wherein a contact for supplying a reference voltage to the sixth semiconductor region, via the fifth semiconductor region, is arranged in the active region where a photoelectric conversion unit of each pixel is arranged,
- wherein the contact includes a plug for supplying the reference voltage, and a seventh semiconductor region of the second conduction type to which the plug is electrically connected, and
- wherein an eighth semiconductor region of the second conduction type, which has an impurity concentration lower than that of the seventh semiconductor region, is arranged between the seventh semiconductor region and the third semiconductor region.
10 more elements
A photoelectric conversion apparatus comprising:
- a semiconductor substrate of a first conduction type;
- a first semiconductor region of the first conduction type;
- a second semiconductor region of a second conduction type, which isolates the semiconductor substrate and the first semiconductor region from each other;
- a pixel unit in which unit cells are arranged two-dimensionally, each unit cell including:
- a plurality of photoelectric conversion units, each photoelectric conversion unit including a third semiconductor region of the first conduction type having an impurity concentration higher than that of the first semiconductor region and a fourth semiconductor region of the second conduction type,
- an amplifying transistor for reading out signals from the plurality of photoelectric conversion units, and
- an element isolation region that electrically isolates an active region where each of the plurality of photoelectric conversion units is arranged from an active region where the amplifying transistor is arranged;
- a fifth semiconductor region of the second conduction type, which is arranged in the first semiconductor region along a side surface and a bottom surface of the element isolation region;
- and
- a sixth semiconductor region of the second conduction type, which is arranged between source and drain regions of the amplifying transistor and the second semiconductor region, in a region below a gate electrode of the amplifying transistor,
- wherein a contact for supplying a reference voltage to the sixth semiconductor region via the fifth semiconductor region is arranged in an active region where at least one of the plurality of photoelectric conversion units is arranged,
- wherein the contact includes a plug for supplying the reference voltage, and a seventh semiconductor region of the second conduction type to which the plug is electrically connected, and
- wherein an eighth semiconductor region of the second conduction type, which has an impurity concentration lower than that of the seventh semiconductor region, is arranged between the seventh semiconductor region and the third semiconductor region.
10 more elements
Dependencies are inferred from the claim text.