Back to results
US 8,013,356 B2Granted
Semiconductor light emitting device
AssigneeRohm Co., Ltd.
InventorsTaketoshi Tanaka, Kuniyoshi Okamoto
Life of this patent
Estimating the term…
Abstract
A semiconductor light emitting device has a device body made of a group III nitride semiconductor having a major surface defined by a nonpolar plane. In the device body, a contact portion with an n-type electrode includes a crystal plane different from the major surface. For example, the contact portion may include a corrugated surface. More specifically, the contact portion may include a region having a plurality of protrusions parallel to a polar plane formed in a striped manner.
Claims13
A semiconductor light emitting device having:
- a device body made of a group III nitride semiconductor, the device body including
- an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer stacked between the n-type semiconductor layer and the p-type semiconductor layer,
- the device body being located on a conductive substrate, wherein the conductive substrate has a major surface defined by a nonpolar plane, and a contact portion of the device body with an n-type electrode includes a crystal plane different from the major surface, wherein the contact portion includes a corrugated surface, and the corrugated surface includes a top surface defined by an m-plane and a side surface defined by a polar plane.
Dependencies are inferred from the claim text.